heterogeneous film

HETEROPHASE SEMICONDUCTORS UNDERACTION OF IRRADIATIONS

The history and current state of our heteropfiase photoconducting CdS-PbS films investigations are observed. Films were prepared by the vacuum evaporation method from the materials with limited mu tual solubility. Reasons of increased degradation stability with respect to radiation (in particular y- and electronic irradiations) are found out. Degradation stability is explained by diversion of recombination flow from wide-gap phase to narrow-gap. Radiation stimulated defects also move to narrow-gap phase.