Cite this article as:

Chucheva G. V., Afanasyev M. S., Anisimov I. A., Georgieva A. I., Levashov . A., Nabiyev A. E. Determining Parameters of Planar Capacitors Based of Thin Film Ferroelectric Materials. Izvestiya of Saratov University. New series. Series Physics, 2012, vol. 12, iss. 2, pp. 8-11.

Heading: 
Physics
UDC: 
537.9
Language: 
Russian

Determining Parameters of Planar Capacitors Based of Thin Film Ferroelectric Materials

Authors: 
Chucheva Galina V., IRE im. V.A.Kotel'nikova RAN, 141120, g. Fryazino Moskovskoy oblasti, pl. Vvedenskogo 1, gvc@ms.ire.rssi.ru
Afanasyev Mikhail Sergeevich, IRE im. V.A.Kotel'nikova RAN, 141120, g. Fryazino Moskovskoy oblasti, pl. Vvedenskogo 1, gvc@ms.ire.rssi.ru
Anisimov Ilya A., IRE im. V.A.Kotel'nikova RAN, 141120, g. Fryazino Moskovskoy oblasti, pl. Vvedenskogo 1, gvc@ms.ire.rssi.ru
Georgieva Anastasia Igorevna, IRE im. V.A.Kotel'nikova RAN, 141120, g. Fryazino Moskovskoy oblasti, pl. Vvedenskogo 1, gvc@ms.ire.rssi.ru
Levashov Sergey Alexandrovich, IRE im. V.A.Kotel'nikova RAN, 141120, g. Fryazino Moskovskoy oblasti, pl. Vvedenskogo 1, gvc@ms.ire.rssi.ru
Nabiyev Asef Enver ogly, Azerbaijan State Pedagogical University, Baku city, U. Hajibeyov street, 34, gvc@ms.ire.rssi.ru
Abstract

Experimental results suggest that in the Ni/Ba0.8Sr0.2TiO3/MgO structure with linear sizes of 150 ×150 mm can be realized by planar capacitor elements of variability over a range of capacity from 0.02 pF to 3.0 pF, which increased capacity is achieved by increasing the number of electrode sections.

Key words: 
thin film ferroelectrics, planar capacitors of microscale size, microstrip lines, phase shifters, microwave devices
References

1. Воротилов К. А., Мухортов В. М., Сигов А. С. Интегрированные сегнетоэлектрические устройства / под ред. чл.-корр. РАН А. С. Сигова. М. : Энергоатомиздат, 2011.

2. Спектор Н. Оценка допустимой мощности в полосковой линии // Полосковые системы сверхвысоких частот / пер. с англ. ; под ред. В. И. Сушкевича. М. : Иностр. лит., 1959. C.160–172.

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