кремний

Voltage-capacitance Characteristics of MIS-structures Based on Ferroelectric Films

Authors: Afanasyev M. S., Mitiagin A. Y., Chucheva G. V.

Metal–ferroelectric–semiconductor (MFS) heterostructures are created on n-type and p-type silicon substrates. Electronically-controlled capacitors are realized in MFS heterostructures. Measured parameters of electronically-controlled capacitors at 50 V bias voltage showed, that the stroke of voltage-capacitance characteristics of capacitors on the p-type silicon mirror reflexion of the stroke of voltage-capacitance characteristics of capacitors on the n-type silicon.

Nonequilibrium the Microwave Plasma of Low Pressure in Scientific Researches and Development Micro and Nanoelectronics

Authors: Yafarov R. K.

Advantages and benefits realization use of nanotechnology of high ionized low-energy microwave plasma of low pressure are described. It presents the fact that one installation on the basis of microwave plasma can replace up 4 to 5 installations with usual high-frequency excitation of the gas discharge.