microwave plasma

Influence of Plasma-Chemical Modification of the Surface on Transverse Electron Transport and VAC of Silicon MIS Structures

Background and Objectives: The laws governing the modification of the current-voltage characteristics of the metal-insulatorsemiconductor structures due to the formation of embedded surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is produced using microwave plasma micromachining. The aim of the work is to study the effect of plasma micromachining in various chemically active gaseous media on the properties of silicon MIS structures.

Carbon Film Nanocomposite for High-Current Field Electron Sources

Background and Objectives: Requirements and problems are formulated when creating cathode materials for high-current emission electronics. It has been shown that to create autocathodes with a current density of up to 100 A/cm2 and above, the development of new nanostructured carbon materials with a surface density of nanodiamond edges of not less than 106–108 cm-2 is necessary. Using a non-equilibrium low-pressure microwave plasma, the regions of regimes for obtaining carbon film coatings containing the diamond and graphite phases in various volume ratios are determined.